ANADIGICS (NASDAQ: ANAD) is one of 27 publicly-traded companies in the “Integrated Circuits” industry, but how does it weigh in compared to its competitors? We will compare ANADIGICS to similar companies based on the strength of its valuation, earnings, risk, profitability, dividends, analyst recommendations and institutional ownership.
Valuation & Earnings
This table compares ANADIGICS and its competitors revenue, earnings per share (EPS) and valuation.
|Gross Revenue||Net Income||Price/Earnings Ratio|
|ANADIGICS Competitors||$697.41 million||$99.19 million||464.30|
This table compares ANADIGICS and its competitors’ net margins, return on equity and return on assets.
|Net Margins||Return on Equity||Return on Assets|
Institutional and Insider Ownership
56.0% of shares of all “Integrated Circuits” companies are held by institutional investors. 14.3% of shares of all “Integrated Circuits” companies are held by insiders. Strong institutional ownership is an indication that large money managers, hedge funds and endowments believe a stock will outperform the market over the long term.
This is a breakdown of recent recommendations and price targets for ANADIGICS and its competitors, as reported by MarketBeat.com.
|Sell Ratings||Hold Ratings||Buy Ratings||Strong Buy Ratings||Rating Score|
As a group, “Integrated Circuits” companies have a potential upside of 15.33%.
ANADIGICS competitors beat ANADIGICS on 7 of the 7 factors compared.
ANADIGICS Company Profile
ANADIGICS, Inc. is engaged in the designing and manufacturing of radio frequency (RF) semiconductor solutions for infrastructure and mobile communications and data transmission markets. The Company’s product portfolio includes line amplifiers, reverse path amplifiers, power amplifiers (PAs) and front-end integrated circuits (FEIC). The Company designs, develops, and manufactures RFIC’s primarily using GaAs compound semiconductor substrates with various process technologies, including metal semiconductor field effect transistor (MESFET), pseudomorphic high-electron-mobility transistor (pHEMT) and heterojunction bipolar transistor (HBT). The Company’s InGaP-Plus technology, combines InGaP HBT and pHEMT processes on a single substrate and integrates the PA function and the RF active switch function on the same die. Additionally, the Company offers VCSEL process technology. The Company fabricates its ICs in its six-inch diameter GaAs wafer fabrication facility.
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